Address: 205 N. Madison St. IATL Building, University of Iowa, Iowa City, Iowa, 52242 Office: (319) 335-1453 Cell: (858) 531-2028 Email: shahram-sm@uiowa.edu view my Resume |
Shahram Seyedmohammadi, Ph.D. Post Doctoral Research Associate
Department of Physics and Astronomy, Optical Science and Technology Center Iowa Advanced Technology Laboratories University of Iowa, Iowa City, IA.
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Post Doctoral Research Concentration
Molecular Beam Epitaxial growth, optical and electronic characterization and device fabrication of III-V superlattices and quaternary structures for near, mid and far infrared applications
Ph.D. Research Concentration Growth and morphology characterization of
self-organized semiconductor nanostructures such as Quantum Wires and
Quantum Dots, using High Index semiconductor templates; Physics
Department, University of Arkansas
Publications “ Leakage mechanisms and potential performance of molecular-beam epitaxially grown GaInAsSb 2.4 um photodiode detectors”, J. P. Prineas, J. R. Yager, Sh. Seydmohamadi, J. T. Olesberg, , Journal of Applied Physics, 103, 104511 (2008) "Tunning the optical performance of surface quantum dots in (In,Ga)As/GaAs hybrid structures", B.L. Liang, Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, M. E. Ware, G. J. Salamo, Optics Express, 15, 8157 (2007) "Controlling planar and vertical ordering in three-dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation”, M. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, P. Schäfer, M. Hanke, R. Köhler, and G. J. Salamo, Physical Review Letters, 96, 066108 (2006) “P-I-N versus P-N homojunctions in GaInAsSb 2.0-2.5 micron photodiods”, J. P. Prineas, J. R. Yager, J. T. Olesberg, Sh. Seydmohamadi, C. Cao, M. Reddy, C. Coretsopoulos, J. L. Hicks, T. F. Boggess, M. Santilli, L. Olafsen, Photonics West (an SPIE Event) Conference Proceeding, San Jose, CA. January 2006 “Orientation dependence behavior of self-assembled (In,Ga)As quantum structures on GaAs surface”, Sh. Seydmohamadi, Zh. M. Wang, and G. J. Salamo, Journal of Crystal Growth, 275, 410 (2005) “Photoluminescence
linewidths from multiple layers of laterally
self-ordered (In,Ga)As quantum
dots”, Zh.
M. Wang, Y.
I. Mazur, Sh. Seydmohamadi
, H. Kissel and
G. J. Salamo,
Applied Physics Letters, 87, 213105 (2005) “RHEED study of GaAs (331)B surface”, V. R. Yazdanpanah, Zh. M. Wang, Sh. Seydmohamadi, and G. J. Salamo, Journal of Crystal Growth, 277, 72 (2005) “Self-assembled (In,Ga)As quantum structures on GaAs (411)A”, Sh. Seydmohamadi, Zh. M. Wang, and G. J. Salamo, Journal of Crystal Growth, 269, 257 (2004) “Surface ordering of
(In,Ga)As
quantum dots controlled by GaAs substrate indexes”, Zh. M. Wang, Sh.
Seydmohamadi, J. H. Lee, and G.
J. Salamo, Applied Physics Letters, 85, 5031
(2004) “Controlling (In,Ga)As quantum structures on high index GaAs surfaces”, Sh. Seydmohamadi, H. Wen, Zh. M. Wang, and G. J. Salamo, Fall 2004 MRS Symposium Proceeding, U1.8/JJ1.8/KK1.8 “Characterization and calibration of the optical system for spin injection studies”, Sh. Seydmohamadi and W. Oliver, Third Annual Tech Summit Conference Proceeding, Bell Engineering Center, University of Arkansas, Fayetteville, AR, April 2003 “Introduction to Spintronics: Concepts, Present Approaches, Future Plans”, Sh. Seydmohamadi, Departmental Seminar, Physics Department, University of Arkansas, Fayetteville, AR., May 2002“Photoconductivity in Selenium photoresistor cell, fabrication and investigation of the physical properties”, Sh. Seydmohamadi, M. H. Feiz and R. Nani, University of Isfahan Science bulletin, May 1997
Presentations "2.4 μm GaInAsSb Mesa Photodiode Detectors: Leakage Currents and Ultimate Performance", J. P. Prineas, J. R. Yager, J. T. Olesberg, Sh. Seydmohamadi, 2008 APS March meeting, session J35.11, New Orleans, LA. “Enhancement of the D* of quaternary GaInAsSb 2.0-2.5 micron P-I-N detectors by light doping of the absorbing region”, J. R. Yager, C. Cao, M. Reddy, J. T. Olesberg, M. Santilli, L.Olafsen, Sh. Seydmohamadi and J. P. Prineas, Photonics West Conference (an SPIE Event), session 6119-3, January 2006, San Jose, CA. “Self-assembly of (In,Ga)As nanostructures on high index GaAs surfaces”, Sh. Seydmohamadi, Department of Physics and Astronomy, University of Iowa, November 2005, Iowa City, IA. “Quantum dots
world”, Sh. Seydmohamadi,
Zh. M. Wang, and G. J. Salamo, Finalist in ‘Science as Art’
competition, Symposium X, 2005 MRS Spring meeting,
San Francisco, CA. “Self-organization of (In,Ga)As/GaAs quantum dot chains”, Zh. M. Wang, Yu. I. Mazur, K. Holmes, Sh. Seydmohamadi, J. L. Shultz, and G. J. Salamo, 32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), January 2005, Bozeman, MO. “Designing self-assembled (In,Ga)As nanostructures using high index GaAs surfaces”, Sh. Seydmohamadi, Zh. M. Wang, H. Wen and G. J. Salamo, 2004 MRS Fall meeting, sessions U1.8/JJ1.8/KK1.8, Boston, MA. “Self-assembled (In,Ga)As quantum structures grown by
molecular beam epitaxy influenced by the orientation of GaAs substrate”,
Sh. Seydmohamadi, Zh. M. Wang, and G. J. Salamo, Arkansas NSF
EPSCoR Annual Conference: Nanoscience under EPSCoR,
September 2004, Little Rock, AR. “(In,Ga)As heteroepitaxial growth on GaAs (331)B”, Sh. Seydmohamadi, Zh. M. Wang, V. R. Yazdanpanah, and G. J. Salamo, 2003 MRS Fall meeting, session T9.10, Boston, MA.
Operational Skills
The following temperature-dependent measurements:
Research Areas of Interest Nanotechnology: MBE growth
and characterization of nanostructures including but not limited to
semiconductors, bio-nanostructures and nano-ferroelectrics;
Optoelectronics and photonics; Self-assembly of nanostructures; Device
fabrication; Spintronics; Quantum
computers; Diluted
magnetic semiconductors; Theoretical computer
skills to simulate growth, evolution and behavior of solid-state
structures.
Computer Skills Fortran, Basic, Windows, DOS, Microsoft Office (Word, Excel, Power Point, Front Page), Origin, Turbo CAD, Mathcad, WSxM and SPIP (Scanning Probe Image Processing), CaRIne Crystallography, Bede Rads X-Ray Diffraction simulation
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